This document describes the features and characteristics of the FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET, including low on-state resistance, fast switching speed, and high energy pulse withstand capability.
The document describes the FQP8N80C, FQPF8N80C, and FQPF8N80CYDTU devices, which are N-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary planar stripe DMOS technology. These devices are designed to minimize on-state resistance and provide superior switching performance for high efficiency switch mode power supplies.
| Drain-Source Voltage | 800 V |
|---|---|
| Continuous Drain Current (TC = 25°C) | 8 A |
| On-Resistance (VGS = 10 V) | 1.55 Ω |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | TO-220 |
The device has a maximum drain-source breakdown voltage of 800 V.
The static drain-source on-resistance is 1.55 Ω at a gate-source voltage of 10 V.
The device operates from -55 to +150 °C and can be stored within that same range.