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The FQPF630 is a 200 V N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for high‑efficiency switching applications such as DC‑DC converters, SMPS, UPS inverters and motor control.
Key specifications include a continuous drain current of 6.3 A at 25 °C, a pulsed current rating of 25.2 A, on‑resistance of 0.42 Ω at Vgs = 10 V, total gate charge of 19 nC, and a power dissipation capability of 38 W. The device is supplied in a TO‑220F package and operates over a temperature range of –55 °C to +150 °C.
| Drain‑Source Voltage (VDS) | 200 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 6.3 A |
| Pulsed Drain Current (ID) @ 100 °C | 25.2 A |
| On‑Resistance (RDS(on)) @ VGS=10 V | 0.42 Ω |
| Total Gate Charge (Qg) | 19 nC |
| Output Capacitance (Coss) | 85 pF |
| Power Dissipation (PD) | 38 W |
| Operating Temperature Range | -55 °C to +150 °C |
The FQPF630 is rated for a maximum drain‑source voltage of 200 V.
It can conduct up to 6.3 A continuously at a case temperature of 25 °C.
The on‑resistance is 0.42 Ω when VGS = 10 V.
It is supplied in a TO‑220F surface‑mount package.