Key facts
- Brand
- Fairchild
- Model
- FQPF6N90
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-12
Start here
Fairchild FQPF6N90 N-Channel MOSFET Datasheet
The FQPF6N90 MOSFET is a 900 V N‑channel enhancement mode power transistor built with Fairchild’s planar stripe DMOS technology. It offers low on‑state resistance, low gate charge, fast switching and 100 % avalanche testing, making it suitable for high‑efficiency switch‑mode power supplies.
The datasheet provides absolute maximum ratings, detailed electrical characteristics (on‑resistance, gate charge, capacitances, switching times), thermal parameters, package dimensions (TO‑220F) and test circuit diagrams. It also includes trademark, disclaimer and product status information.
Fairchild FQPF6N90 specifications
| Drain‑Source Voltage (VDS) | 900 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 3.4 A |
| Gate‑Source Voltage (VGS) | ±30 V |
| On‑Resistance (RDS(on)) | 1.92 Ω @ VGS=10 V |
| Power Dissipation (PD) @ 25 °C | 56 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 2.25 °C·W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C·W |
All Fairchild FQPF6N90 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage rating of the FQPF6N90?
The device is rated for a maximum drain‑source voltage of 900 V.
Which package does the FQPF6N90 use?
It is supplied in a TO‑220F package.
What is the maximum drain‑source voltage of the FQPF6N90?
The device is rated for a maximum drain‑source voltage of 900 V.
What is the typical gate charge of this MOSFET?
The typical gate charge is about 40 nC.