Key facts
- Brand
- Fairchild
- Model
- FQPF6N80C
- Industry
- Industrial
- Documents
- 2
- Languages
- ZH · EN
- Last added
- 2012-07-12
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Fairchild Semiconductor FQP6N80C/FQPF6N80C 800V N-Channel MOSFET Datasheet
This document is a technical datasheet for the Fairchild Semiconductor FQP6N80C and FQPF6N80C N-Channel enhancement mode power field effect transistors. These devices utilize proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance for high efficiency switch mode power supplies. This manual is written in Chinese.
Read onlineFairchild FQPF6N80C specifications
| Drain-Source Voltage | 800 V |
|---|---|
| On-Resistance (VGS = 10 V) | 2.5 Ω |
| Gate Charge (Typical) | 21 nC |
| Reverse Transfer Capacitance (Typical) | 8 pF |
| Operating Temperature Range | -55 to +150 °C |
Source: Fairchild Semiconductor FQP6N80C/FQPF6N80C 800V N-Channel MOSFET Datasheet
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Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain-source voltage rating for this MOSFET?
The device has a maximum drain-source voltage rating of 800 V.
From: Fairchild Semiconductor FQP6N80C/FQPF6N80C 800V N-Channel MOSFET Datasheet
What is the maximum junction temperature for operation?
The maximum operating junction temperature is 150°C.
From: Fairchild Semiconductor FQP6N80C/FQPF6N80C 800V N-Channel MOSFET Datasheet
What is the maximum drain‑source voltage for the FQP6N80C/FQPF6N80C?
The devices are rated for a maximum drain‑source voltage of 800 V.
From: Fairchild FQP6N80C/FQPF6N80C 800V N-Channel MOSFET Datasheet
Which package types are available for this MOSFET series?
The MOSFETs are offered in TO‑220 and TO‑220F packages.
From: Fairchild FQP6N80C/FQPF6N80C 800V N-Channel MOSFET Datasheet