This document introduces the features and characteristics of QFET products.
The FQPF630 is a 200 V N‑Channel enhancement‑mode power MOSFET built with Fairchild's planar stripe DMOS technology. It is designed for high‑efficiency switching in DC‑DC converters, SMPS, motor control, and UPS applications, offering low on‑resistance, low gate charge, and fast switching.
Key data include a continuous drain current of 6.3 A at 25 °C, a pulsed rating of 25.2 A, a typical R_DS(on) of 0.42 Ω at V_GS=10 V, and a total gate charge of 19 nC. The device is supplied in a TO‑220F package with thermal resistance of 3.32 °C·W (junction‑to‑case) and 62.5 °C·W (junction‑to‑ambient).
| Drain‑Source Voltage (V_DSS) | 200 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 6.3 A |
| Pulsed Drain Current (I_DM) | 25.2 A |
| Gate‑Source Voltage (V_GS) Rating | ±25 V |
| Power Dissipation (P_D) @ 25 °C | 38 W |
| On‑Resistance (R_DS(on)) Typical | 0.42 Ω @ V_GS=10 V |
| Total Gate Charge (Q_G) | 19 nC typical |
| Junction‑to‑Case Thermal Resistance (RθJC) | 3.32 °C·W |
| Package Type | TO‑220F |
The device is rated for a maximum drain‑source voltage of 200 V.
It can conduct up to 6.3 A continuously at a case temperature of 25 °C.
The typical on‑resistance is 0.42 Ω when the gate‑source voltage is 10 V.
The MOSFET is supplied in a TO‑220F surface‑mount package.