Key facts
- Brand
- Fairchild
- Model
- FQPF6N60
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-12
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Fairchild FQPF6N60 600V N-Channel MOSFET Datasheet
The FQPF6N60 is a 600 V N‑Channel enhancement‑mode power MOSFET built with Fairchild's planar stripe DMOS technology. It offers low gate charge (≈20 nC), low output capacitance (≈10 pF), and high avalanche capability, making it suitable for high‑efficiency switch‑mode power supplies.
Key specifications include a continuous drain current of 3.6 A at 25 °C, pulsed drain current of 14.4 A, and a maximum power dissipation of 44 W. Thermal resistance values are 2.84 °C/W (junction‑to‑case) and 62.5 °C/W (junction‑to‑ambient). The device is supplied in a TO‑220F package with detailed mechanical dimensions.
Fairchild FQPF6N60 specifications
| Drain‑Source Voltage (VDS) | 600 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 3.6 A |
| Pulsed Drain Current (ID) (Note 1) | 14.4 A |
| Gate‑Source Voltage (VGS) | ±30 V |
| Power Dissipation (PD) @ 25 °C | 44 W |
| Thermal Resistance, Junction‑to‑Case (RθJC) | 2.84 °C/W |
| Thermal Resistance, Junction‑to‑Ambient (RθJA) | 62.5 °C/W |
| Single Pulse Avalanche Energy | 440 mJ |
| dv/dt (Peak Diode Recovery) | 45 V/µs |
All Fairchild FQPF6N60 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage rating?
The device is rated for a maximum drain‑source voltage of 600 V.
What continuous drain current can the FQPF6N60 handle at 25 °C?
It can conduct up to 3.6 A continuously at a case temperature of 25 °C.
What is the maximum drain‑source voltage for the FQPF6N60?
The device is rated for a maximum drain‑source voltage of 600 V.
What continuous drain current can the FQPF6N60 handle at 25 °C?
It can conduct up to 3.6 A continuously at a case temperature of 25 °C.