This file introduces the structure and working principle of QFET.
This document is a datasheet for the Fairchild Semiconductor FQPF630, an N-Channel enhancement mode power field effect transistor. The device utilizes the company's proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. It is designed for applications such as high efficiency switching DC/DC converters, switch mode power supplies, and motor control.
| Drain-Source Voltage | 200 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 6.3 A |
| On-Resistance | 0.42 @Vgg = 10 V |
| Gate Charge (Typical) | 19 nC |
| Power Dissipation (Tc = 25°C) | 38 W |
| Operating Temperature Range | -55 to +150 °C |
The FQPF630 can withstand a single pulsed avalanche energy of up to 164 mJ.
The device is rated for operation and storage between -55°C and +150°C.