FQP11N50CF/FQPF11N50CF is a 500V N-Channel MOSFET with a maximum current of 11A and an on-resistance of 0.55 ohms. The device is manufactured using Fairchild's proprietary planar stripe DMOS technology and features low on-resistance, low gate charge, low Crss, fast switching, fast recovery body diode and 100% avalanche testing. It is suitable for high efficiency switched mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology.
The document describes the Fairchild FQP11N50CF and FQPF11N50CF, which are N-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary planar stripe DMOS technology. These devices are designed to minimize on-state resistance and provide superior switching performance, making them suitable for high efficiency switched mode power supplies and active power factor correction applications.
| Drain-Source Voltage | 500 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | 11 A |
| Continuous Drain Current (Tg = 100°C) | 7 A |
| Gate-Source Voltage | +30 V |
| Single Pulsed Avalanche Energy | 670 mJ |
| Power Dissipation (Tc = 25°C) | 195 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction-to-Case | 0.64 °C/W |
| Static Drain-Source On-Resistance | 0.55 Ω |
| Total Gate Charge | 43 nC |
The device features 11A current, 500V rating, low gate charge, low Crss, fast switching, and a fast recovery body diode.
They are well suited for high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.
The maximum junction temperature is 150 °C.