FQP11N50CF/FQPF11N50CF is a 500V N-Channel MOSFET produced by Fairchild. It has 11A current, 500V voltage, 0.55Ω on-state resistance, 43 nC gate charge, 20pF Crss, fast switching, 100% avalanche tested, improved dv/dt capability and 90ns fast recovery body diode.
The FQP11N50CF and FQPF11N50CF are 500 V N‑Channel enhancement mode power MOSFETs built with Fairchild’s planar stripe DMOS technology. They feature low on‑resistance, low gate charge, fast switching, and a fast recovery body diode, making them suitable for high‑efficiency switched‑mode power supplies and related applications.
The document lists absolute maximum ratings, thermal characteristics, electrical parameters such as drain current, gate charge, capacitances, and avalanche energy, as well as mechanical dimensions for the TO‑220 and TO‑220F packages. Test circuit diagrams for gate charge, switching, and diode recovery are also included.
| Drain‑Source Voltage (V_DSS) | 500 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 11 A |
| Typical Gate Charge (Q_g) | 43 nC |
| On‑Resistance (R_DS(on)) | 0.552 Ω @ V_GS = 10 V |
| Power Dissipation (P_D) | 195 W (Tc = 25 °C) |
| Thermal Resistance Junction‑to‑Case (Rθ_JC) | 0.64 °C/W |
| Single Pulsed Avalanche Energy | 670 mJ |
The maximum drain‑source voltage is 500 V.
The typical gate charge is 43 nC.
The device can dissipate up to 195 W at a case temperature of 25 °C.