This product is a 400V N-Channel MOSFET. Its features include 10.5A, 400V, RDS(on)=0.5 Ω @VGS=10V, low gate charge (typical 28 nC), low Crss (typical 85pF), fast switching, 100% avalanche tested, improved dv/dt capability, etc.
The FQP11N40C and FQPF11N40C are N‑Channel enhancement mode power MOSFETs fabricated with Fairchild’s planar stripe DMOS technology. They are optimized for low on‑resistance, fast switching, and high‑energy avalanche capability, making them suitable for switched‑mode power supplies, power factor correction, and electronic lamp ballasts.
Key specifications include a 400 V drain‑source rating, 10.5 A continuous drain current at 25 °C, 42 A pulsed current, typical gate charge of 28 nC, and a power dissipation of 135 W (junction‑to‑case thermal resistance 0.93 °C·W). The devices are offered in TO‑220 and TO‑220F packages with detailed mechanical dimensions provided.
| Drain‑Source Voltage (VDS) | 400 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 10.5 A |
| Pulsed Drain Current (ID) (Note 1) | 42 A |
| Typical Gate Charge (Qg) | 28 nC |
| Power Dissipation (PD) at 25 °C | 135 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 0.93 °C·W |
The device is rated for a maximum drain‑source voltage of 400 V.
It can handle a continuous drain current of 10.5 A at 25 °C.
The typical gate charge is 28 nC.