The FQP11N40C/FQPF11N40C 400V N-Channel MOSFET is a low RDS(on), high voltage N-channel MOSFET manufactured by Fairchild that can be used in high-efficiency switched mode power supplies, active power factor correction, and half-bridge topology electronic lamp ballasts.
This document provides technical specifications for the Fairchild FQP11N40C and FQPF11N40C, which are 400V N-Channel enhancement mode power MOSFETs produced using proprietary planar stripe DMOS technology. Key features include a typical on-state resistance of 9.52 mΩ at Vgs = 10V, low gate charge (typical 28 nC), and fast switching performance.
| Drain-Source Voltage | 400 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 10.5 A |
| On-State Resistance (Vgs = 10 V) | 9.52 mΩ |
| Gate Charge (Typical) | 28 nC |
| Thermal Resistance, Junction-to-Case | 0.93 °CAV |
The device can withstand a single pulsed avalanche energy of 360 mJ.