Key facts
- Brand
- Fairchild
- Model
- FJMA790
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-12
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Fairchild FJMA790 PNP Epitaxial Silicon Transistor Datasheet
The document describes the Fairchild Semiconductor FJMA790, a high current surface mount PNP epitaxial silicon transistor. It is specifically designed for load management in portable applications and features RoHS compliance.
Key electrical characteristics include a maximum collector current of -2 A and low collector-emitter saturation voltage. The device operates with absolute maximum ratings such as a collector-base voltage of -50 V, a power dissipation of 1.56 W (under specific conditions), and a junction temperature up to 150 °C.
Fairchild FJMA790 specifications
| Collector Current (DC) | -2 A |
|---|---|
| Power Dissipation | 1.56 W |
| Junction Temperature | 150 °C |
| Collector-Base Voltage | -50 V |
Source: Fairchild FJMA790 PNP Epitaxial Silicon Transistor Datasheet
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Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
How much power can this transistor dissipate when mounted on a 1.5 x 1.5 in. board?
It has a power dissipation rating of 1.56 W under those conditions.
From: Fairchild FJMA790 PNP Epitaxial Silicon Transistor Datasheet
What is the maximum collector current for the FJMA790?
The maximum collector current is 2 A.
From: Fairchild FJMA790 PNP Epitaxial Silicon Transistor Datasheet
What is the collector‑emitter breakdown voltage of the FJMA790?
The collector‑emitter breakdown voltage is -35 V.
From: Fairchild FJMA790 PNP Epitaxial Silicon Transistor Datasheet