Key facts
- Brand
- Fairchild
- Model
- FJMA790
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-12
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DatasheetFAIRCHILD FJMA790 PNP Epitaxial Silicon Transistor handbook
FAIRCHILD FJMA790 PNP Epitaxial Silicon Transistor handbook
Datasheet
FJMA790 is a PNP epitaxial silicon transistor for load management in portable applications. It features high collector current and low collector-emitter saturation voltage.
Read onlineFairchild FJMA790 specifications
| Collector‑Base Voltage (VCBO) | -50 V |
|---|---|
| Collector‑Emitter Voltage (VCEO) | -35 V |
| Emitter‑Base Voltage (VEBO) | -5 V |
| Maximum Collector Current (IC) | -2 A |
| Junction Temperature (TJ) | 150 °C |
| Storage Temperature (TSTG) | -55 °C to 150 °C |
| Package Type | MicroFET2X2 MLP 2×2 |
| RoHS Compliance | Yes |
Source: Fairchild FJMA790 PNP Epitaxial Silicon Transistor Datasheet
All Fairchild FJMA790 documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum collector current for the FJMA790?
The maximum collector current is 2 A.
From: Fairchild FJMA790 PNP Epitaxial Silicon Transistor Datasheet
What is the collector‑emitter breakdown voltage of the FJMA790?
The collector‑emitter breakdown voltage is -35 V.
From: Fairchild FJMA790 PNP Epitaxial Silicon Transistor Datasheet