Key facts
- Brand
- Texas Instruments
- Model
- TPS1100Y
- Industry
- Industrial
- Documents
- 5
- Languages
- EN
- Last added
- 2012-08-01
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DatasheetTEXAS INSTRUMENTS TPS1100 TPS1100Y handbook(3)
TEXAS INSTRUMENTS TPS1100 TPS1100Y handbook(3)
Datasheet
the tps1100 is a single p-channel enhancement-mode mosfet from ti. the device has been optimized for 3v or 5v power distribution in battery-powered systems by means of ti's linbicmos process. it has low rDS(on), low voltage and high switching speed.
Read onlineTexas Instruments TPS1100Y specifications
| Maximum drain‑to‑source voltage (VDS) | -15 V |
|---|---|
| Maximum gate‑to‑source voltage (VGS) | -15 V |
| Continuous drain current (150 °C) | 1 A |
| Storage temperature range | -55 °C to 150 °C |
| Operating junction temperature range | -40 °C to 150 °C |
| Typical total gate charge (Qg) | 5.45 nC |
Source: Texas Instruments TPS1100/TPS1100Y Single P-Channel MOSFET Datasheet
All Texas Instruments TPS1100Y documents by type
Datasheet 4
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum voltage rating for the TPS1100 MOSFET?
The device can tolerate a drain‑to‑source voltage of up to –15 V and a gate‑to‑source voltage of up to –15 V.
From: Texas Instruments TPS1100/TPS1100Y Single P-Channel MOSFET Datasheet
What is the typical gate charge of the TPS1100?
The typical total gate charge is 5.45 nC.
From: Texas Instruments TPS1100/TPS1100Y Single P-Channel MOSFET Datasheet