Key facts
- Brand
- Texas Instruments
- Model
- TPS1120
- Industry
- Industrial
- Documents
- 4
- Languages
- EN
- Last added
- 2012-08-01
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Texas Instruments TPS1120/TPS1120Y Dual P-Channel MOSFET Datasheet
The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs optimized for 3-V and 5-V power distribution in battery-powered systems. With a maximum Vgs(th) of -1.5 V and an Ipgs of only 0.5 pA, it serves as an ideal high-side switch for low-voltage portable battery-management systems. The devices feature built-in circuitry for 2-kV ESD protection and are compatible with TTL and CMOS inputs.
Read onlineTexas Instruments TPS1120 specifications
| Maximum Gate-to-Source Voltage (Vgs) | -1.5 V |
|---|---|
| Quiescent Current (Iqq) | 0.5 µA |
| ESD Protection Rating | 2 kV |
All Texas Instruments TPS1120 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum operating junction temperature for the TPS1120?
The device is characterized for an operating junction temperature range from -40°C to 150°C.
From: Texas Instruments TPS1120/TPS1120Y Dual P-Channel MOSFET Datasheet
What is the maximum continuous drain current for each device at a junction temperature of 150°C?
The maximum continuous drain current is 0.74 A when the junction temperature is 150°C.
From: Texas Instruments TPS1120/TPS1120Y Dual P-Channel MOSFET Datasheet
What is the maximum operating junction temperature for the TPS1120?
The device is characterized for an operating junction temperature range from -40°C to 150°C.
What is the maximum drain-to-source voltage rating for the TPS1120?
The absolute maximum drain-to-source voltage is -15 V.
What is the primary application for the TPS1120?
It is designed as an ideal high-side switch for low-voltage portable battery-management systems.
What voltage levels is the device compatible with?
The MOSFETs are optimized for 3-V or 5-V power distribution.