The TPS1100 is a single P-channel enhancement-mode MOSFET optimized for 3V or 5V power distribution in battery-powered systems. It has low rDS(on) and excellent AC characteristics, making it suitable for low-voltage switching applications.
The TPS1100 is a single P-channel enhancement-mode MOSFET optimized for 3-V or 5-V power distribution in battery-powered systems. It features a maximum gate-to-source voltage (Vgs(th)) of -1.5 V and an on-state resistance (Rds(on)) as low as 9 mΩ typical at Vgs = -10 V, making it suitable for high-side switching applications.
| Drain-to-source voltage (Vds) | -15 V |
|---|---|
| Gate-to-source voltage (Vgs) | -2 to 15 V |
| Operating junction temperature range (Tj) | -40 to 150 °C |
| Static drain-to-source on-state resistance (Rds(on)) typ. | 9 mΩ at Vgs = -10 V |
The device can operate at a junction temperature range of -40 to 150 °C.
Yes, the device features TTL and CMOS Compatible Inputs.