The document provides information about TPS1100PWLE suppliers. The product has certain features and characteristics.
The TPS1100 is a single P-channel enhancement-mode MOSFET optimized for 3-V to 5-V power distribution in battery-powered systems using Texas Instruments LinBiCMOS process. With a maximum V@sqh) of -1.5 V and an Ingg of only 0.5 pA, it serves as an ideal high-side switch for low-voltage, portable battery-management systems. The device features excellent AC response characteristics with a typical rise time of 10 ns, making it suitable for PWM controllers and motor/bridge drivers.
| Drain-to-source voltage | -15 V |
|---|---|
| Turn-on delay time | 45 ns |
| Rise time | 10 ns |
The maximum gate-to-source voltage is -1.5 V.
The lead temperature can reach 260 °C for 10 seconds.
The typical rise time is 10 ns.