the tps1100 is a single p-channel enhancement-mode mosfet from ti. the device has been optimized for 3v or 5v power distribution in battery-powered systems by means of ti's linbicmos process. it has low rDS(on), low voltage and high switching speed.
The TPS1100 is a single P-channel enhancement-mode MOSFET optimized for 3-V or 5-V power distribution in battery-powered systems. It features a low on-state resistance (DS(on)) of approximately 0.18 Ω typical at VGS = -10V and requires no external bias source, making it ideal for high-side switching applications such as pulse-width-modulated controllers and motor drivers.
| Drain-to-source voltage (VDS) | -15 V |
|---|---|
| Storage temperature range | -55 to 150 °C |
| Operating junction temperature (Tj) | -40 to 150 °C |
| Typical on-state resistance at VGS = -10V | 0.18 Ω |
| Maximum gate threshold voltage (|VGsth|) | 1.5 V |
The typical on-state resistance (DS(on)) is 0.18 Ω at a gate-to-source voltage of -10 V.
The device operates within a junction temperature range of -40°C to 150°C and a storage temperature range of -55°C to 150°C.
Yes, the device features TTL and CMOS compatible inputs.