Texas Instruments TPS1101Y Manuals

ManualLib has 2 documents for the Texas Instruments TPS1101Y: 2 datasheets. Every file can be read online or downloaded as a PDF for free.

Datasheet 2

Key facts

Model
TPS1101Y
Industry
Industrial
Documents
2
Languages
EN
Last added
2012-08-01

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TEXAS INSTRUMENTS TPS1101 TPS1101Y handbook(1)

TEXAS INSTRUMENTS TPS1101 TPS1101Y handbook(1)

Datasheet 10 pages · 142 KB · EN

The TPS1101 is a single, low RDS(on) P-channel enhancement-mode MOSFET optimized for 3-V or 5-V power distribution in battery-powered systems. It features a maximum gate-to-source voltage of -1.5 V and a low gate current of 0.5 µA, making it ideal for high-side switching in portable battery-management systems. The device is available in D and PW (TSSOP) packages.

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Datasheet 2

Ratings, dimensions and ordering codes, for selection and design work.

Questions answered in these manuals

Is the TPS1101 compatible with TTL and CMOS inputs?

Yes, the device features TTL and CMOS compatible inputs.

From: TEXAS INSTRUMENTS TPS1101 TPS1101Y handbook(1)

What is the typical rise time for the TPS1101?

The typical rise time is 5.5 ns.

From: TEXAS INSTRUMENTS TPS1101 TPS1101Y handbook(1)

Is the TPS1101 compatible with TTL and CMOS inputs?

Yes, the device features TTL and CMOS compatible inputs.

From: TEXAS INSTRUMENTS TPS1101 TPS1101Y handbook

What is the typical rise time of the TPS1101?

The typical rise time is 5.5 ns.

From: TEXAS INSTRUMENTS TPS1101 TPS1101Y handbook