Texas Instruments TPS1100 Manuals

the tps1100 is a single p-channel enhancement-mode mosfet from ti. the device has been optimized for 3v or 5v power distribution in battery-powered systems by means of ti's linbicmos process. it has low rDS(on), low voltage and high switching speed.

The document provides information about TPS1100PWLE suppliers. The product has certain features and characteristics.

TPS1100, TPS1100Y are single P-channel enhancement mode MOSFETs from Texas Instruments. The device has been optimized for 3V or 5V power distribution in battery-powered systems. The device has a maximum VGS(th) of -1.5V and an IDSS of only 0.5µA, making it the ideal high-side switch for low-voltage, portable battery-management systems where maximizing battery life is a primary concern. TPS1100 also features a low RDS(on) and excellent ac characteristics (typical rise time of 10ns), making it the logical choice for low-voltage switching applications such as power switches for pulse-width modulated (PWM) controllers or motor/bridge drivers. The TSSOP(PW) version has a small footprint and reduced height, and can be installed in places where other P-channel MOSFETs cannot. This size advantage is especially important in cases where board space is at a premium and height restrictions do not allow for a small outline integrated circuit (SOIC) package.

The TPS1100 is a single P-channel enhancement-mode MOSFET optimized for 3V or 5V power distribution in battery-powered systems. It has low rDS(on) and excellent AC characteristics, making it suitable for low-voltage switching applications.

the tps1100 is a single p-channel enhancement-mode mosfet from ti company. it is suitable for 3v or 5v power distribution and has low rDS(on), low vGS(th), and TTL and CMOS compatible inputs. it can be used in battery management systems, pulse-width modulated controllers or motor/bridge drivers.