TPS1100, TPS1100Y are single P-channel enhancement mode MOSFETs from Texas Instruments. The device has been optimized for 3V or 5V power distribution in battery-powered systems. The device has a maximum VGS(th) of -1.5V and an IDSS of only 0.5µA, making it the ideal high-side switch for low-voltage, portable battery-management systems where maximizing battery life is a primary concern. TPS1100 also features a low RDS(on) and excellent ac characteristics (typical rise time of 10ns), making it the logical choice for low-voltage switching applications such as power switches for pulse-width modulated (PWM) controllers or motor/bridge drivers. The TSSOP(PW) version has a small footprint and reduced height, and can be installed in places where other P-channel MOSFETs cannot. This size advantage is especially important in cases where board space is at a premium and height restrictions do not allow for a small outline integrated circuit (SOIC) package.
The TPS1100 is a single P-channel enhancement-mode MOSFET designed for low-voltage battery-powered systems. Optimized using the LinBiCMOS process, it features a maximum gate-to-source voltage of -1.5 V and an on-state resistance (RDS(on)) as low as 9 mΩ typical at VGS = -10V. The device is suitable for high-side switching applications such as power switches for PWM controllers or motor/bridge drivers.
| Drain-to-source voltage (VDS) | -15 V |
|---|---|
| Continuous drain current (ID) at Ta = 25°C | +4 A |
| Storage temperature range | -55 to 150 °C |
| Operating junction temperature range (Tj) | -40 to 150 °C |
| RDS(on) typical at VGS = -10V | 9 mΩ |
The maximum gate-to-source voltage (VGS) is -1.5 V.
Yes, the TPS1100 features TTL and CMOS Compatible Inputs.