STGP3NB60F/STGD3NB60F/STGP3NB60FD/STGF3NB60FD/STGB3NB60FD is a N-channel 3A-600V PowerMESH™ IGBT from STMicroelectronics. It features high input impedance (voltage driven), low on-voltage drop (Vcesat), low gate charge, high current capability, off losses include tail current, high frequency operation, short circuit rated. It is suitable for motor controls, SMPS and PFC.
This datasheet provides the key specifications for the STGP3NB60F and STGD3NB60F PowerMESH™ IGBTs, including absolute maximum ratings, thermal data, and switching parameters. The document also lists mechanical dimensions and packaging options for various package types such as TO‑220, TO‑220FP, DPAK and D2PAK.
The IGBTs are designed for high‑voltage, high‑current applications such as motor controls and SMPS. Detailed tables give collector‑emitter voltage, gate‑emitter voltage, on‑state voltage drop, total dissipation, and thermal resistance values, along with characteristic curves for gate charge and switching losses.
| Gate‑Emitter Voltage (VGE) | +20 V |
|---|---|
| Continuous Collector Current (Ic) at 25 °C | 6 A |
| Pulsed Collector Current (Ic) (300 µs, 1.5 % duty) | 24 A |
It can handle up to 6 A continuous collector current at a case temperature of 25 °C.