Key facts
- Brand
- STMicroelectronics
- Model
- PD54008L-E
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-08-09
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DatasheetST STEVAL-TDR003V1 2-stage RF power amp: PD84001 + PD54008L-E + LPF N-channel enhancement-mode lateral MOSFETs handbook
STMicroelectronics PD54008L-E specifications
| Drain‑Source Voltage (VDS) | 25 V |
|---|---|
| Gate‑Source Voltage (VGS) | -0.5 to +15 V |
| Drain Current (ID) | 5 A |
| Power Dissipation (PD) | 26.7 W |
| Maximum Junction Temperature (Tj) | 150 °C |
| Storage Temperature (Tst) | -65 to +150 °C |
| Junction‑to‑Case Thermal Resistance (RθJC) | 3 °C/W |
| ESD Protection (Human Body Model) | 2 kV |
Source: STMicroelectronics PD54008L-E RF Power Transistor Datasheet
All STMicroelectronics PD54008L-E documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain current for the PD54008L‑E?
The maximum drain current is 5 A.
From: STMicroelectronics PD54008L-E RF Power Transistor Datasheet
What is the allowed storage temperature range?
The device can be stored from –65 °C up to +150 °C.
From: STMicroelectronics PD54008L-E RF Power Transistor Datasheet