The document describes the features and characteristics of Rev 1 January 2006 1/15 15 PD54008L-E RF Power Transistors, including excellent thermal stability, common source configuration, broadband performances, new leadless plastic package, EDS protection, etc. It is designed for high gain, broad band commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1 GHz. PD54008L-E's superior linearity performance makes it an ideal solution for portable radio.
The PD54008L-E is a common‑source N‑channel LDMOS RF power transistor designed for high‑gain, broadband applications up to 1 GHz. It features a lead‑less plastic PowerFLAT™ package, excellent thermal stability, and ESD protection.
The document provides absolute maximum ratings, thermal data, electrical characteristics, impedance data, typical performance graphs, and a test‑circuit schematic, along with packaging information and revision history.
| Drain‑Source Voltage (VDS) | 25 V |
|---|---|
| Gate‑Source Voltage (VGS) | -0.5 to +15 V |
| Drain Current (ID) | 5 A |
| Power Dissipation (PD) | 26.7 W |
| Maximum Junction Temperature (Tj) | 150 °C |
| Storage Temperature (Tst) | -65 to +150 °C |
| Junction‑to‑Case Thermal Resistance (RθJC) | 3 °C/W |
| ESD Protection (Human Body Model) | 2 kV |
The maximum drain current is 5 A.
The device can be stored from –65 °C up to +150 °C.
The maximum operating junction temperature is 150 °C.
The junction‑to‑case thermal resistance is 3 °C/W.