The FQP7N65C/FQPF7N65C is a N-channel enhancement mode power field effect transistor produced by Fairchild. It uses Fairchild's proprietary planar stripe DMOS technology, which has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
This document is a datasheet for the Fairchild Semiconductor FQP7N65C and FQPF7N65C N-Channel enhancement mode power field effect transistors. These devices utilize Fairchild's proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. They are designed for applications such as high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.
| Drain-Source Voltage | 650 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 7 A |
| Continuous Drain Current (Tc = 100°C) | 4.2 A |
| Pulsed Drain Current | 28 A |
| Gate-Source Voltage | +30 V |
| Single Pulsed Avalanche Energy | 212 mJ |
| Power Dissipation (Tc = 25°C) | 160 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Package Type | TO-220 / TO-220F |
The typical gate charge is 28 nC.
The typical Crss is 12 pF.
Yes, they are 100% avalanche tested.
The thermal resistance, junction-to-case is 0.78 °C/W.