FQP7N65C/FQPF7N65C is a 650V N-channel MOSFET manufactured by Fairchild. It features low gate charge, low drain-source capacitance, fast switching, 100% avalanche tested and improved dv/dt capability. This device is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
The Fairchild FQP7N65C and FQPF7N65C are 650 V N‑Channel enhancement‑mode power MOSFETs built with DMOS planar stripe technology. They are intended for high‑efficiency switched‑mode power supplies, active power factor correction and half‑bridge lamp ballast applications. The datasheet provides a complete set of electrical characteristics, absolute maximum ratings, and thermal specifications.
Key sections include General Description, Features, Absolute Maximum Ratings, Thermal Characteristics, Electrical Characteristics, Typical Characteristics, and Package Dimensions. The document also contains trademark information, a disclaimer, and product status definitions for design and production use.
| Drain‑Source Voltage (VDS) | 650 V |
|---|---|
| Gate‑Source Voltage (VGS) | ±30 V |
The device can withstand up to 650 V drain‑source voltage.