The FQPF7N60 is a 600V N-channel MOSFET produced by Fairchild. It uses Fairchild's proprietary planar stripe DMOS technology and has the features of low on-state resistance, fast switching, 100% avalanche testing, etc.
The FQPF7N60 is a 600 V N‑Channel enhancement mode power MOSFET designed for high‑efficiency switch‑mode power supplies. It features low gate charge, low output capacitance, and robust avalanche capability.
The document provides absolute maximum ratings, detailed electrical characteristics, typical performance curves, and mechanical package dimensions for the TO‑220F package.
| Drain‑Source Voltage (VDS) | 600 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 43 A |
| Continuous Drain Current (ID) @ 100 °C | 27 A |
| Pulsed Drain Current (ID) (Note 1) | 17.2 A |
| Gate‑Source Voltage (VGS) | 30 V |
| Power Dissipation (PD) @ 25 °C | 48 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 2.60 °C/W |
| Thermal Resistance Junction‑to‑Ambient (RθJA) | 62.5 °C/W |
The FQPF7N60 can withstand up to 600 V drain‑source voltage.
It is rated for 43 A continuous drain current at a case temperature of 25 °C.
Typical total gate charge is about 29 nC.
The MOSFET is supplied in a TO‑220F package.