FQPF7N60 is a 600V N-Channel MOSFET from Fairchild Semiconductor with a maximum continuous current of 4.3A, 1.0 ohm typical on-state resistance, 29 nC typical gate charge, 16 pF typical gate capacitance, 100% avalanche tested and improved dv/dt capability.
The FQPF7N60 is a 600 V N‑Channel enhancement‑mode power MOSFET designed for high‑efficiency switch‑mode power supplies. It features low gate charge (typical 29 nC), low output capacitance (≈1.1‑1.4 nF), and robust avalanche capability.
The datasheet provides absolute maximum ratings, thermal characteristics, detailed electrical parameters (on‑resistance, transconductance, switching times), typical characteristic curves, and package dimensions for the TO‑220F version. Test circuit diagrams for gate‑charge, resistive switching, and diode recovery are also included.
| Drain-Source Voltage (VDS) | 600 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 4.3 A |
| Pulsed Drain Current (ID) (Note 1) | 17.2 A |
| Gate-Source Voltage (VGS) | ±30 V |
| Power Dissipation (PD) at 25 °C | 48 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 2.60 °C/W |
| Thermal Resistance Junction‑to‑Ambient (RθJA) | 62.5 °C/W |
| Typical Gate Charge (Qg) | 29 nC |
The device is rated for a maximum drain‑source voltage of 600 V.
It can handle a continuous drain current of 4.3 A at 25 °C.
The typical gate charge is about 29 nC.
The MOSFET is supplied in a TO‑220F package.