This document introduces an N-channel enhancement mode power field effect transistor produced by Fairchild. It uses Fairchild's proprietary planar stripe DMOS technology, which minimizes on-state resistance, provides superior switching performance, and withstands high energy pulse in avalanche and commutation mode. It is suitable for high efficiency switch mode power supplies.
This document is a datasheet for the Fairchild Semiconductor FQPF7N60, an N-Channel enhancement mode power field effect transistor (MOSFET). The device utilizes Fairchild's proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. It is specifically tailored for high efficiency switch mode power supply applications and is well-suited for handling high energy pulses in avalanche and commutation modes.
The datasheet provides comprehensive electrical characteristics, including absolute maximum ratings, off and on characteristics, dynamic parameters, and switching characteristics. It also includes typical performance curves for on-resistance, transfer characteristics, capacitance, and safe operating areas, along with package dimensions for the TO-220F package.
| Drain-Source Voltage | 600 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | 4.3 A |
| Continuous Drain Current (Tc = 100°C) | 2.7 A |
| Gate-Source Voltage | +30 V |
| Single Pulsed Avalanche Energy | 580 mJ |
| Power Dissipation (Tg = 25°C) | 48 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Package Type | TO-220F |
The typical gate charge is 29 nC.
The typical reverse transfer capacitance is 16 pF.
Yes, the device is 100% avalanche tested.
The maximum lead temperature for soldering purposes is 300 °C.