Key facts
- Brand
- Fairchild
- Model
- FQP9N90C
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-12
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FAIRCHILD FQP9N90C/FQPF9N90C 900V N-Channel MOSFET handbook
This document describes the features and characteristics of the FQP9N90C/FQPF9N90C 900V N-Channel MOSFET produced by Fairchild Semiconductor Corporation. These power field effect transistors utilize Fairchild's proprietary planar stripe DMOS technology to achieve low on-state resistance, superior switching performance, and high energy pulse withstand capabilities in avalanche and commutation modes. These devices are well-suited for high efficiency switched mode power supplies.
Read onlineFairchild FQP9N90C specifications
| Drain‑Source Voltage (VDS) | 900 V |
|---|---|
| Gate‑Source Voltage (VGS) | +30 V |
| On‑Resistance (RDS(on)) typical | 1.4 mΩ |
| Thermal Resistance, Junction‑to‑Case (RθJC) | 0.61 °C/W |
| Package Type | TO‑220 / TO‑220F |
Source: Fairchild FQP9N90C/FQPF9N90C 900V N-Channel MOSFET Datasheet
All Fairchild FQP9N90C documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage for the FQP9N90C/FQPF9N90C?
The device is rated for a maximum drain‑source voltage of 900 V.
From: Fairchild FQP9N90C/FQPF9N90C 900V N-Channel MOSFET Datasheet
Which package styles are available for this MOSFET?
The MOSFET is offered in TO‑220 and TO‑220F packages.
From: Fairchild FQP9N90C/FQPF9N90C 900V N-Channel MOSFET Datasheet