Key facts
- Brand
- Fairchild
- Model
- FQP6N90C
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-12
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DatasheetFAIRCHILD FQP6N90C/FQPF6N90C 900V N-Channel MOSFET handbook
FAIRCHILD FQP6N90C/FQPF6N90C 900V N-Channel MOSFET handbook
Datasheet
The FQP6N90C/FQPF6N90C is a 900V N-channel MOSFET produced by Fairchild using Fairchild's proprietary planar stripe DMOS technology. It features low on-state resistance, superior switching performance and high-energy pulse handling.
Read onlineFairchild FQP6N90C specifications
| Drain‑Source Voltage (VDS) | 900 V |
|---|---|
| Gate‑Source Voltage (VGS) | ±30 V |
| On‑Resistance (RDS(on)) typical | 2.32 mΩ @ VGS=10 V |
| Gate Charge (Qg) typical | 30 nC |
| Thermal Resistance Junction‑to‑Case (RθJC) | 0.75 °C/W |
| Package Types | TO‑220, TO‑220F |
Source: Fairchild FQP6N90C/FQPF6N90C N-Channel MOSFET Datasheet
All Fairchild FQP6N90C documents by type
Datasheet 1
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage for the FQP6N90C/FQPF6N90C?
The maximum drain‑source voltage is 900 V.
From: Fairchild FQP6N90C/FQPF6N90C N-Channel MOSFET Datasheet
What is the typical gate charge of these MOSFETs?
The typical gate charge is 30 nC.
From: Fairchild FQP6N90C/FQPF6N90C N-Channel MOSFET Datasheet