Key facts
- Brand
- Fairchild
- Model
- FQP6N40CF
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-12
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Fairchild Semiconductor FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Datasheet
This document provides comprehensive technical data for the Fairchild Semiconductor FQP6N40CF and FQPF6N40CF N-Channel enhancement mode power field effect transistors. Produced using proprietary DMOS technology, these devices are designed for high efficiency switched mode power supplies and electronic lamp ballasts. Key features include a 6A continuous drain current, 400V drain-source voltage rating, and low on-state resistance of 1.1 Ω.
Read onlineFairchild FQP6N40CF specifications
| Drain-Source Voltage | 400 V |
|---|---|
| Continuous Drain Current (TC = 25°C) | 6 A |
| On-Resistance | 1.1 Ω |
| Gate Charge (Typical) | 16 nC |
| Reverse Transfer Capacitance | 15 pF |
| Operating Temperature Range | -55 to +150 °C |
| Thermal Resistance Junction-to-Case | 1.71 °C/W |
Source: Fairchild Semiconductor FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Datasheet
All Fairchild FQP6N40CF documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain current for the FQP6N40CF?
The maximum continuous drain current is 6 A at TC = 25°C.
From: Fairchild Semiconductor FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Datasheet
What is the typical on-state resistance?
The typical on-state resistance (RDS(on)) is 1.1 Ω at VGS = 10 V.
From: Fairchild Semiconductor FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Datasheet
What is the maximum drain‑source voltage for the FQP6N40CF?
The device is rated for a maximum drain‑source voltage of 400 V.