The FQP6N90C/FQPF6N90C is a 900V N-channel MOSFET produced by Fairchild using Fairchild's proprietary planar stripe DMOS technology. It features low on-state resistance, superior switching performance and high-energy pulse handling.
This document provides technical specifications and characteristics for the FQP6N90C and FQPF6N90C series of 900V N-Channel MOSFETs. These devices utilize Fairchild's proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance suitable for high efficiency switch mode power supplies.
The datasheet details absolute maximum ratings, electrical characteristics including off and on characteristics, dynamic parameters such as capacitance and gate charge, and thermal properties. It also includes typical characteristic curves, test circuit diagrams, package dimensions for TO-220 and TO-220F packages, and trademark information.
| Drain-Source Voltage (V_DSS) | 900 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | 6 A |
| Pulsed Drain Current | 24 A |
| Total Gate Charge (Qg) | Typical 30 nC |
| Reverse Transfer Capacitance (Crss) | Typical 15 pF |
| Operating and Storage Temperature Range | -55 to +150 °C |