FQP6N90C/FQPF6N90C is a high-performance N-channel enhancement mode power field effect transistor produced by Fairchild. This device uses Fairchild's proprietary planar stripe DMOS technology and has low on-state resistance, fast switching and 100% avalanche testing, making it suitable for high efficiency switch mode power supplies.
The Fairchild FQP6N90C and FQPF6N90C are 900 V N‑Channel enhancement mode power MOSFETs built with planar stripe DMOS technology. They are designed for high‑efficiency switch‑mode power supplies, offering low on‑resistance, low gate charge and fast switching.
The document provides absolute maximum ratings, electrical and thermal characteristics, typical performance curves, and mechanical dimensions for the TO‑220 and TO‑220F packages. It also includes trademark information and product status definitions.
| Drain‑Source Voltage (VDS) | 900 V |
|---|---|
| Gate‑Source Voltage (VGS) | ±30 V |
| On‑Resistance (RDS(on)) typical | 2.32 mΩ @ VGS=10 V |
| Gate Charge (Qg) typical | 30 nC |
| Thermal Resistance Junction‑to‑Case (RθJC) | 0.75 °C/W |
| Package Types | TO‑220, TO‑220F |
The maximum drain‑source voltage is 900 V.
The typical gate charge is 30 nC.
The MOSFET is offered in TO‑220 and TO‑220F packages.