Key facts
- Brand
- Fairchild
- Model
- FQP6N80C
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-12
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DatasheetFAIRCHILD FQP6N80C/FQPF6N80C 800V N-Channel MOSFET handbook
FAIRCHILD FQP6N80C/FQPF6N80C 800V N-Channel MOSFET handbook
Datasheet
This document describes the features and characteristics of the FQP6N80C/FQPF6N80C, an 800V N-Channel MOSFET product. It includes low on-state resistance, superior switching performance, and ability to withstand high energy pulses. This product is suitable for high efficiency switch mode power supplies.
Read onlineFairchild FQP6N80C specifications
| Drain‑Source Voltage (VDS) | 800 V |
|---|---|
| Gate‑Source Voltage (VGS) | +30 V |
| On‑Resistance (RDS(on)) typical | 0.252 Ω @ VGS=10 V |
| Total Gate Charge (Qg) | 21 nC (typical) |
| Reverse Transfer Capacitance (Crss) | 8 pF (typical) |
Source: Fairchild FQP6N80C/FQPF6N80C 800V N-Channel MOSFET Datasheet
All Fairchild FQP6N80C documents by type
Datasheet 1
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage for the FQP6N80C/FQPF6N80C?
The devices are rated for a maximum drain‑source voltage of 800 V.
From: Fairchild FQP6N80C/FQPF6N80C 800V N-Channel MOSFET Datasheet
Which package types are available for this MOSFET series?
The MOSFETs are offered in TO‑220 and TO‑220F packages.
From: Fairchild FQP6N80C/FQPF6N80C 800V N-Channel MOSFET Datasheet