Key facts
- Brand
- Fairchild
- Model
- FQP6N40C
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-12
Start here
Fairchild FQP6N40C/FQPF6N40C 400V N-Channel MOSFET Datasheet
This document provides technical specifications for the FQP6N40C and FQPF6N40C, which are 400V N-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary planar stripe DMOS technology. These devices feature low on-state resistance and superior switching performance, making them suitable for high efficiency switched mode power supplies and electronic lamp ballasts.
Read onlineFairchild FQP6N40C specifications
| Drain-Source Voltage | 400 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | 6 A |
| Pulsed Drain Current | 24 A |
| Gate-Source Voltage | +30 V |
| Single Pulsed Avalanche Energy | 270 mJ |
| Power Dissipation (Tg = 25°C) | 73 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
Source: Fairchild FQP6N40C/FQPF6N40C 400V N-Channel MOSFET Datasheet
All Fairchild FQP6N40C documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the maximum continuous drain currents at different case temperatures?
The device supports a continuous current of 6 A at a case temperature of 25°C, which drops to 3.6 A when the case temperature reaches 100°C.
From: Fairchild FQP6N40C/FQPF6N40C 400V N-Channel MOSFET Datasheet
What is the maximum single pulsed avalanche energy rating?
The FQP6N40C and FQPF6N40C can withstand a single pulsed avalanche energy of up to 270 mJ.
From: Fairchild FQP6N40C/FQPF6N40C 400V N-Channel MOSFET Datasheet
What is the maximum drain‑source voltage for the FQP6N40C/FQPF6N40C?
The maximum drain‑source voltage is 400 V.
What is the typical gate charge of these MOSFETs?
The typical gate charge is 16 nC.