This document describes the features and characteristics of the FQP6N80C/FQPF6N80C, an 800V N-Channel MOSFET product. It includes low on-state resistance, superior switching performance, and ability to withstand high energy pulses. This product is suitable for high efficiency switch mode power supplies.
This document is a technical datasheet for the Fairchild Semiconductor FQP6N80C and FQPF6N80C N-Channel enhancement mode power field effect transistors. These devices utilize proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance for high efficiency switch mode power supplies. This manual is written in Chinese.
| Drain-Source Voltage | 800 V |
|---|---|
| On-Resistance (VGS = 10 V) | 2.5 Ω |
| Gate Charge (Typical) | 21 nC |
| Reverse Transfer Capacitance (Typical) | 8 pF |
| Operating Temperature Range | -55 to +150 °C |
The device has a maximum drain-source voltage rating of 800 V.
The maximum operating junction temperature is 150°C.