The FQP6N80C/FQPF6N80C 800V N-Channel MOSFET is a power field effect transistor produced by Fairchild Semiconductor Corporation. It has low on-state resistance, high switching performance, and can withstand high energy pulses.
The FQP6N80C/FQPF6N80C series are N‑channel enhancement mode power MOSFETs built with Fairchild’s planar stripe DMOS technology. They are designed for high‑efficiency switch‑mode power supplies, offering low on‑state resistance, fast switching, and robust avalanche capability.
Key specifications include an 800 V drain‑source rating, 5.5 A continuous drain current at 25 °C, low gate charge (typical 21 nC), and a typical on‑resistance of 0.252 Ω at VGS = 10 V. The devices are offered in TO‑220 and TO‑220F packages with detailed thermal and electrical characteristics provided in the datasheet.
| Drain‑Source Voltage (VDS) | 800 V |
|---|---|
| Gate‑Source Voltage (VGS) | +30 V |
| On‑Resistance (RDS(on)) typical | 0.252 Ω @ VGS=10 V |
| Total Gate Charge (Qg) | 21 nC (typical) |
| Reverse Transfer Capacitance (Crss) | 8 pF (typical) |
The devices are rated for a maximum drain‑source voltage of 800 V.
The MOSFETs are offered in TO‑220 and TO‑220F packages.
Typical on‑resistance is 0.252 Ω when VGS = 10 V.