This product is a 400V N-channel MOSFET with low on-state resistance, low gate capacitance and fast recovery
The FQP6N40CF and FQPF6N40CF are 400 V N‑channel enhancement‑mode power MOSFETs built with Fairchild’s planar DMOS technology. They feature a low typical gate charge of 16 nC, low output capacitance (≈15 pF), fast recovery body diode (≈70 ns) and are suited for high‑efficiency switched‑mode power supplies and lamp ballasts.
The datasheet provides absolute maximum ratings, electrical characteristics, thermal data, mechanical dimensions and test circuit waveforms. Key parameters include a continuous drain current of 6 A at 25 °C, pulsed drain current of 24 A, and a power dissipation of up to 73 W. Package options are TO‑220 and TO‑220F with detailed mechanical drawings.
| Drain‑Source Voltage (VDS) | 400 V |
|---|---|
| Gate‑Source Voltage (VGS) | +30 V |
| Junction‑to‑Case Thermal Resistance | 1.71 °C·W |
The device is rated for a maximum drain‑source voltage of 400 V.