This datasheet introduces FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET features, including rated voltage, maximum current, gate voltage, switching speed, etc.
This document provides comprehensive technical data for the Fairchild Semiconductor FQP6N40CF and FQPF6N40CF N-Channel enhancement mode power field effect transistors. Produced using proprietary DMOS technology, these devices are designed for high efficiency switched mode power supplies and electronic lamp ballasts. Key features include a 6A continuous drain current, 400V drain-source voltage rating, and low on-state resistance of 1.1 Ω.
| Drain-Source Voltage | 400 V |
|---|---|
| Continuous Drain Current (TC = 25°C) | 6 A |
| On-Resistance | 1.1 Ω |
| Gate Charge (Typical) | 16 nC |
| Reverse Transfer Capacitance | 15 pF |
| Operating Temperature Range | -55 to +150 °C |
| Thermal Resistance Junction-to-Case | 1.71 °C/W |
The maximum continuous drain current is 6 A at TC = 25°C.
The typical on-state resistance (RDS(on)) is 1.1 Ω at VGS = 10 V.
These devices are well suited for high efficiency switched mode power supplies and electronic lamp ballasts based on half bridge topology.