This document describes the features and characteristics of the FQP6N40C/FQPF6N40C 400V N-Channel MOSFET. These devices are produced using Fairchild's proprietary DMOS technology and have low on-state resistance, superior switching performance, and high energy pulse capability. They are suitable for high efficiency switched mode power supplies and electronic lamp ballasts based on half bridge topology.
The FQP6N40C and FQPF6N40C are N‑Channel enhancement mode power MOSFETs built with Fairchild's planar stripe DMOS technology. They are designed for high‑efficiency switched‑mode power supplies and electronic lamp ballasts, offering low on‑state resistance and fast switching.
Key specifications include a 400 V drain‑source rating, 6 A continuous drain current at 25 °C, 24 A pulsed current capability, typical gate charge of 16 nC, and input capacitance of 480‑625 pF. The devices are supplied in TO‑220 and TO‑220F packages with detailed thermal resistance data.
| Drain‑Source Voltage (VDS) | 400 V |
|---|---|
| Pulsed Drain Current (Id) (Note 1) | 24 A |
| Typical Gate Charge (Qg) | 16 nC |
| Package Type | TO‑220 / TO‑220F |
The maximum drain‑source voltage is 400 V.
The typical gate charge is 16 nC.
They are available in TO‑220 and TO‑220F packages.