FQP6N40C/FQPF6N40C is a 400V N-channel MOSFET produced by Fairchild Semiconductor Corporation using Fairchild's proprietary planar stripe DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.
This document provides technical specifications for the FQP6N40C and FQPF6N40C, which are 400V N-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary planar stripe DMOS technology. These devices feature low on-state resistance and superior switching performance, making them suitable for high efficiency switched mode power supplies and electronic lamp ballasts.
| Drain-Source Voltage | 400 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | 6 A |
| Pulsed Drain Current | 24 A |
| Gate-Source Voltage | +30 V |
| Single Pulsed Avalanche Energy | 270 mJ |
| Power Dissipation (Tg = 25°C) | 73 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
The device supports a continuous current of 6 A at a case temperature of 25°C, which drops to 3.6 A when the case temperature reaches 100°C.
The FQP6N40C and FQPF6N40C can withstand a single pulsed avalanche energy of up to 270 mJ.
These devices are rated for operation and storage between -55°C and +150°C.