This document is the user manual of FDN5632N_F085 N-Channel Logic Level PowerTrench® MOSFET, which introduces the features and characteristics of the product, including RDS(on) = 98mΩ at VGS = 4.5V, ID = 1.6A, RDS(on) = 82mΩ at VGS = 10V, ID = 1.7A, Typ Qg(TOT) = 9.2nC at VGS = 10V, Low Miller Charge, Qualified to AEC Q101, etc.
This datasheet describes the Fairchild FDN5632N_F085 N‑Channel Logic Level PowerTrench MOSFET. It lists key electrical ratings such as a 60 V drain‑to‑source voltage, 20 V gate‑to‑source voltage, and a continuous drain current of 17 A at VGS = 10 V. Thermal characteristics, on‑resistance, and capacitance values are also provided.
Typical application notes include usage in DC‑DC converters and motor drives, with compliance to automotive standards (AEC‑Q101). Package information, ordering codes, and trademark notices are included at the end of the document. This manual is written in Japanese.
| Drain to Source Voltage (VDS) | 60 V |
|---|---|
| Gate to Source Voltage (VGS) | +20 V |
| Continuous Drain Current (ID) at VGS=10 V | 17 A |
| Power Dissipation (PD) | 1.1 W |
| Input Capacitance (CISS) | 475 pF |
| Output Capacitance (COS) | 198 pF |
The maximum drain‑to‑source voltage is 60 V.
Yes, it is qualified to AEC‑Q101 for automotive applications.