The TPS1120 is a dual P-channel enhancement-mode MOSFET optimized for 3V or 5V power distribution in battery-powered systems. It features low rDS(on) of 0.18Ω at VGS = -10V, making it an ideal high-side switch for low-voltage portable battery-management systems. With a maximum VGS(th) of -1.5V and an IDSS of only 0.5µA, it helps maximize battery life. The MOSFETs have built-in circuitry for 2kV ESD protection to address electrostatic discharge (ESD) risks. The TPS1120 is commonly used in notebook computers, personal digital assistants (PDAs), cellular telephones, bar-code scanners, and PCMCIA cards.
The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs optimized by the Texas Instruments LinBiCMOS process. It is specifically designed as an ideal high-side switch for low-voltage portable battery-management systems, such as notebook computers and PDAs, where maximizing battery life is a primary concern.
| Total gate charge (Typ) | 5.4 nC |
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The device is characterized for an operating junction temperature range from -40°C to 150°C.
The absolute maximum drain-to-source voltage is -15 V.