The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs optimized by the Texas Instruments LinBiCMOS process. It is designed as an ideal high-side switch for low-voltage portable battery-management systems, featuring a maximum Vgs(th) of -1.5 V and low quiescent current to maximize battery life.
| Maximum Gate-to-Source Voltage (Vgs) | -1.5 V |
|---|---|
| Quiescent Current (Iqq) | 0.5 µA |
| ESD Protection Rating | 2 kV |
It is designed as an ideal high-side switch for low-voltage portable battery-management systems.
The MOSFETs are optimized for 3-V or 5-V power distribution.
Suitable applications include notebook computers, PDAs, cellular telephones, bar-code scanners, and PCMCIA cards.