Texas Instruments TPS1120/TPS1120Y Dual P-Channel MOSFET Datasheet

About this manual

The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs optimized for 3-V and 5-V power distribution in battery-powered systems. With a maximum Vgs(th) of -1.5 V and an Ipgs of only 0.5 pA, it serves as an ideal high-side switch for low-voltage portable battery-management systems. The devices feature built-in circuitry for 2-kV ESD protection and are compatible with TTL and CMOS inputs.

What's inside

• Description
• Available Options
• Absolute Maximum Ratings
• Electrical Characteristics
• Typical Characteristics
• Package Information

Frequently asked questions

What is the maximum operating junction temperature for the TPS1120?

The device is characterized for an operating junction temperature range from -40°C to 150°C.

What is the maximum continuous drain current for each device at a junction temperature of 150°C?

The maximum continuous drain current is 0.74 A when the junction temperature is 150°C.

How much electrostatic discharge protection is built into the TPS1120?

The MOSFETs have built-in circuitry for 2-kV ESD protection.