Key facts
- Brand
- STMicroelectronics
- Model
- VND5E008MY-E
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-08
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STMicroelectronics VND5E008MY-E Datasheet
Datasheet 35 pages · 877 KB · EN
The VND5E008MY-E is a double channel high-side driver manufactured using STMicroelectronics proprietary viPower MOS technology. It is designed to drive 12 V automotive grounded loads and provides protection and diagnostics. The device integrates advanced protective functions such as load current limitation, inrush and overload active management by power limitation, overtemperature shut-off with auto restart, and overvoltage active clamp.
Read onlineSTMicroelectronics VND5E008MY-E specifications
| Operating voltage range | 4.5 to 28V |
|---|---|
| On-state resistance (per channel) | 8mQ |
| Current limitation (typical) | 76A |
| Off-state supply current | 2 mA |
| Junction operating temperature | -40 to 150 °C |
| Storage temperature | -55 to 150 °C |
| Package type | PowerSSO-36 |
All STMicroelectronics VND5E008MY-E documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum transient supply voltage?
The maximum transient supply voltage (Vecpk) is 40V for a duration less than 400ms.
Is the device compatible with 3V CMOS inputs?
Yes, the device features 3.0V CMOS compatible inputs.