Key facts
- Brand
- STMicroelectronics
- Model
- VND7N04-1
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-08
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ST VND7N04 VND7N04-1 VNK7N04FM handbook
This document describes the features and characteristics of the VND7N04, VND7N04-1, and VNK7N04FM 'OMNIFET' fully autoprotected power MOSFETs, released in March 2009 Rev 1 1/17 17. These MOSFETs are made using STMicroeletronics VIPower M0 Technology and are intended to replace standard power MOSFETs in DC to 50 KHz applications. They feature linear current limitation, thermal shutdown, short circuit protection, integrated clamp, low current drawn from input pin, diagnostic feedback, ESD protection, and direct access to the gate of the power MOSFET for analog driving.
Read onlineSTMicroelectronics VND7N04-1 specifications
| Drain‑source clamp voltage | 42 V |
|---|---|
| Continuous drain current | 7 A |
| Typical Rds(on) | 0.149 Ω |
| Thermal resistance (junction‑case) | 3.75 °C/W |
| Storage temperature range | -55 °C to 150 °C |
All STMicroelectronics VND7N04-1 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum storage temperature for these MOSFETs?
The devices are rated for storage temperatures from –55 °C up to 150 °C.
What is the typical turn‑on delay time at a 15 V gate drive and 3.5 A load?
The typical turn‑on delay time is 50 ns.