STGD3NB60KD is a high power IGBT designed by STMicroelectronics, with a maximum voltage of 600V and a maximum current of 3A. The rated working temperature is -65 to 150°C.
This document is a technical datasheet for the STD3NB60KD, an N-channel 3A - 600V PowerMESH™ IGBT housed in a DPAK package. The device features short circuit proof capability and is co-packaged with a TurboSwitch™ antiparallel diode.
| Collector Current (continuous) at Tc = 25°C | 6 A |
|---|---|
| Collector Current (pulsed) | 24 A |
| Short Circuit Withstand Time | 10 us |
| Total Dissipation at To = 25°C | 35 W |
| Storage Temperature Range | -65 to 150 °C |
The maximum continuous collector current is 6 A when the case temperature is 25°C.
The maximum collector-emitter voltage rating is 600 V.