STMicroelectronics STEVAL-TDR004V1 Manuals

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Datasheet 2

Key facts

Model
STEVAL-TDR004V1
Industry
Industrial
Documents
2
Languages
EN
Last added
2012-08-09

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ST STEVAL-TDR004V1 RF power amplifier demonstration board using two SD2933 N-channel enhancement-mode lateral MOSFETs handbook

ST STEVAL-TDR004V1 RF power amplifier demonstration board using two SD2933 N-channel enhancement-mode lateral MOSFETs handbook

Product Leaflet 12 pages · 218 KB · EN

The STEVAL-TDR004V1 is an RF broadband power amplifier demonstration board designed for linear or nonlinear operation over the 1.6 to 54 MHz frequency band. It utilizes two SD2933 N-channel enhancement-mode lateral MOSFETs and features a temperature compensating biasing circuit that supports both Class B and Class AB operation modes. The board was designed in cooperation with Specific RF Devices (Germany).

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STMicroelectronics STEVAL-TDR004V1 specifications

Frequency range1.6 - 54 MHz
Supply voltage48 V
Output power400 W (typ.)
Input power10 W max.
Efficiency57 % - 76 %
IMD< -26 dBc
Load mismatch3:1 (all phases)

Source: ST STEVAL-TDR004V1 RF power amplifier demonstration board using two SD2933 N-channel enhancement-mode lateral MOSFETs handbook

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Datasheet 2

Ratings, dimensions and ordering codes, for selection and design work.

Questions answered in these manuals

What class of operation does the STEVAL-TDR004V1 support?

The board supports Class B and Class AB operation modes.

From: ST STEVAL-TDR004V1 RF power amplifier demonstration board using two SD2933 N-channel enhancement-mode lateral MOSFETs handbook

How is the bias point selected on the demonstration board?

The bias point is selected using a 'BIAS' control port; leaving it open sets Class B (~100 mA), while connecting it to ground sets Class AB (~900 mA).

From: ST STEVAL-TDR004V1 RF power amplifier demonstration board using two SD2933 N-channel enhancement-mode lateral MOSFETs handbook