The BFG67W is a NPN 8GHz wideband transistor from Philips Semiconductors. It features high power gain and low noise figure, and is intended for wideband applications in the GHz range such as analog satellite television systems and portable RF communication equipment.
The document describes the BFG67W, BFG67W/X, and BFG67W/XR, which are NPN silicon planar epitaxial transistors designed for wideband applications in the GHz range. These devices are suitable for analog satellite television systems and portable RF communication equipment. They feature gold metallization for reliability and are available in SOT343 and SOT343R plastic packages.
| Collector-base voltage | 20 V |
|---|---|
| Collector-emitter voltage | 10 V |
| Collector current (DC) | 50 mA |
| Total power dissipation | 500 mW |
| Noise figure | 2.2 dB |
The maximum total power dissipation is 500 mW up to a temperature of 85 °C.
The maximum collector-base voltage is 20 V with the emitter open.